Origin of the lattice sites occupied by implanted Co in Si

• Tipo: Artigo em Revista Científica Internacional
• Data: 2014

Autores

Silva, DJ (Autor) Outra; Wahl, U (Autor) Outra; Correia, JG (Autor) Outra; Pereira, LMC (Autor) Outra; Amorim, LM (Autor) Outra; da Silva, MR (Autor) Outra; araujo, j. p. (Autor) FCUP

Revista

Título: Semiconductor Science and Technology

Vol. 29

Página Final: 125006

ISSN: 0268-1242

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 4 Citações

Scopus - 4 Citações

Outras Informações

ID Authenticus: P-00A-0YK

DOI: 10.1088/0268-1242/29/12/125006

Abstract (EN): We have investigated the lattice location of implanted Co-61 in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. To assess the origin of the observed lattice sites we have compared our results to emission channeling studies on Fe-59 and Ni-65 and to Mossbauer spectroscopy experiments on Co-57, present in literature. The possible interpretation of several Co-57 Mossbauer lines is discussed in the light of our new results on the Co-61 lattice location. The conclusions are relevant for the microscopic understanding of some gettering techniques.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5