Finite element power diode model optimized through experiment-based parameter extraction

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Chibante, R (Autor) Outra; Araujo, A (Autor) FEUP; Carvalho, A (Autor) FEUP

Revista

Título: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Vol. 22

Páginas: 351-367

ISSN: 0894-3370

Editora: Wiley-Blackwell

Indexação

ISI Web of Knowledge - 1 Citação

Scopus - 1 Citação

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia electrotécnica

Outras Informações

ID Authenticus: P-003-G6Q

DOI: 10.1002/jnm.708

Abstract (EN): This paper presents a finite element physics-based power diode model with parameters established through an extraction procedure validated experimentally. The model core is a numerical module that solves the ambipolar diffusion equation through a variational formulation followed by an approximate solution with the finite element method. Other zones of the device are modeled with classical methods in an analytical module. This hybrid approach enables accurate modeling and simulation of power bipolar semiconductor devices, using standard SPICE circuit simulators, with low execution times. As physics-based models need a significant number of parameters, an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters using some simple device waveform measurements. Implementation details of power diode model, in IsSpice simulator, are presented. Experimental validation is performed. Results prove the usefulness of the proposed methodology for efficient design of power circuits through simulation. Copyright (C) 2008 John Wiley & Sons, Ltd.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 17