Finite element power diode model optimized through experiment-based parameter extraction

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Chibante, R (Author) Other; Araujo, A (Author) FEUP; Carvalho, A (Author) FEUP

Journal

Title: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Vol. 22

Pages: 351-367

ISSN: 0894-3370

Publisher: Wiley-Blackwell

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Electrical engineering

Other information

Authenticus ID: P-003-G6Q

DOI: 10.1002/jnm.708

Abstract (EN): This paper presents a finite element physics-based power diode model with parameters established through an extraction procedure validated experimentally. The model core is a numerical module that solves the ambipolar diffusion equation through a variational formulation followed by an approximate solution with the finite element method. Other zones of the device are modeled with classical methods in an analytical module. This hybrid approach enables accurate modeling and simulation of power bipolar semiconductor devices, using standard SPICE circuit simulators, with low execution times. As physics-based models need a significant number of parameters, an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters using some simple device waveform measurements. Implementation details of power diode model, in IsSpice simulator, are presented. Experimental validation is performed. Results prove the usefulness of the proposed methodology for efficient design of power circuits through simulation. Copyright (C) 2008 John Wiley & Sons, Ltd.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 17