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Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

Title
Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
Type
Article in International Scientific Journal
Year
2013
Authors
Silva, JPB
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Sekhar, KC
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Almeida, A
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Agostinho Moreira, JA
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Pereira, M
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Gomes, MJM
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Journal
Vol. 113
Pages: 817-824
ISSN: 0947-8396
Publisher: Springer Nature
Scientific classification
FOS: Engineering and technology > Materials engineering
Other information
Authenticus ID: P-006-697
Abstract (EN): The Ba0.8Sr0.2TiO3 thin films were grown on the Pt-Si substrate at 700 A degrees C by using a pulsed laser deposition technique at different oxygen partial pressure (PO2) in the range of 1-20 Pa and their properties were investigated. It is observed that the PO2 during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO2, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance-voltage (C-V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO2 of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.
Language: English
Type (Professor's evaluation): Scientific
Contact: josesilva@fisica.uminho.pt
No. of pages: 8
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