Low-temperature dielectric response of NaTaO3 ceramics and films

• Type: Article in International Scientific Journal
• Date: 2012

Authors

Tkach, A (Author) Other; Almeida, A (Author) FCUP; Agostinho Moreira, JA (Author) FCUP; Perez de la Cruz, JP (Author) Other; Romaguera Barcelay, Y (Author) Other; Vilarinho, PM (Author) Other

Journal

Title: Applied Physics Letters

Vol. 100

Final page: 192909

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 24 Citations

Scopus - 25 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-002-A4N

DOI: 10.1063/1.4714527

Abstract (EN): In this work, NaTaO3 ceramics are prepared by conventional mixed oxide method and NaTaO3 films are deposited by RF magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTaO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1 kHz and 1MHz, the dielectric permittivity of NaTaO3 ceramics is frequency independent and increases on cooling up to similar to 324, which is the highest value ever reported for NaTaO3 ceramics. In contrast, NaTaO3 films exhibit a dielectric relaxation between similar to 20 and 30K, following the Arrhenius law with activation energy similar to 51 meV and pre-exponential term similar to 10(-15) s and attributed to polaron hopping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714527]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4