Disorder induced localized states in graphene

• Type: Article in International Scientific Journal
• Date: 2006

Authors

Pereira, VM (Author) Other; Guinea, F (Author) Other; dos Santos, JMBL (Author) FCUP; Peres, NMR (Author) Other; Castro Neto, AH (Author) Other

Journal

Title: Physical Review Letters

Vol. 96

ISSN: 0031-9007

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 516 Citations

Scopus - 544 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-004-NMW

DOI: 10.1103/physrevlett.96.036801

Abstract (EN): We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close to the Fermi level. We also study the problem of a finite density of vacancies, obtaining the electronic density of states, and discussing the issue of electronic localization in these systems. Our results also have relevance for the problem of disorder in d-wave superconductors.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4