Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect

• Type: Article in International Scientific Journal
• Date: 2007

Authors

Eduardo V Castro (Author) Other; Novoselov, KS (Author) Other; Morozov, SV (Author) Other; Peres, NMR (Author) Other; Lopes M B L Dos Santos (Author) FCUP; Johan Nilsson (Author) Other; Guinea, F (Author) Other; Geim, AK (Author) Other; Castro Neto, AH (Author) Other

Journal

Title: Physical Review Letters

Vol. 99

ISSN: 0031-9007

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 1680 Citations

Scopus - 1699 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-004-689

DOI: 10.1103/physrevlett.99.216802

Abstract (EN): We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less than or similar to 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4