Gaped graphene bilayer: disorder and magnetic field effects

• Type: Article in International Scientific Journal
• Date: 2007

Authors

Eduardo V Castro (Author) Other; Peres, NMR (Author) Other; Lopes M B L dos Santos (Author) FCUP

Journal

Title: Physica Status Solidi (B): Basic Research

Vol. 244

Pages: 2311-2316

ISSN: 0370-1972

Publisher: Wiley-Blackwell

Indexing

ISI Web of Knowledge - 26 Citations

Scopus - 29 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-004-97B

DOI: 10.1002/pssb.200674604

Abstract (EN): Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder and perpendicular magnetic field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6