Lattice site location studies of rare-earths implanted in ZnO single-crystals

• Type: Article in International Conference Proceedings Book
• Date: 2003

Authors

rita, emc (Author) Other; wahl, u (Author) Other; lopes, al (Author) Other; araujo, jp (Author) FCUP; correia, jg (Author) Other; alves, e (Author) Other; soares, jc (Author) Other

Conference proceedings International

Title: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Pages: 105-110

Symposium on Progress in Semiconductors II - Electronic and Optoelectronic Applications

BOSTON, MA, DEC 02-05, 2002

Indexing

ISI Web of Knowledge - 2 Citations

Scopus - 2 Citations

Other information

Authenticus ID: P-000-KJ2

Abstract (EN): In this work we report on the lattice site location Of Tare earths in single-crystalline ZnO by means of the emission channeling (EC) technique. Following low dose (3x10(13) at/cm(2)) 60 keV ion implantation of the precursor isotope Yb-169, a position-sensitive electron detector was used to monitor the angular distribution of the conversion electrons emitted from Tm-169* as a function of the annealing temperature up to 600degreesC in vacuum. An additional annealing at 800degreesC in flowing O-2 was performed. The EC measurements revealed that around 95-100% of the rare earth atoms occupy substitutional Zn sites up to an annealing temperature of 600degreesC/vacuum. After the 800degreesC/O-2 annealing, the emission channeling effects decreased considerably.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6