Electroforming, magnetic and resistive switching in MgO-based tunnel junctions

• Type: Article in International Scientific Journal
• Date: 2009

Authors

teixeira, j. m. (Author) Other; ventura, j. (Author) FCUP; fermento, r. (Author) Other; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) FCUP; wisniowski, p. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Journal of Physics D: Applied Physics

Vol. 42

Final page: 105407

ISSN: 0022-3727

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 32 Citations

Scopus - 34 Citations

Other information

Authenticus ID: P-003-K1X

DOI: 10.1088/0022-3727/42/10/105407

Abstract (EN): Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R-switching only in the thinnest series, while thicker barrier samples need an electroforming step for R-switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel-to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4