Evidence of N substitution by Mn in GaN

• Type: Article in International Scientific Journal
• Date: 2012

Authors

pereira, l. m. c. (Author) Other; wahl, u. (Author) Other; correia, j. g. (Author) Other; decoster, s. (Author) Other; amorim, l. m. (Author) Other; da silva, m. r. (Author) Other; araujo, j. p. (Author) FCUP; vantomme, a. (Author) Other

Journal

Title: Physical Review B - Condensed Matter and Materials Physics

Vol. 86

ISSN: 1098-0121

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 18 Citations

Scopus - 18 Citations

Other information

Authenticus ID: P-002-3G0

DOI: 10.1103/physrevb.86.195202

Abstract (EN): We report on the lattice location of Mn in wurtzite GaN using beta(-) emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, and stabilized by a highly charged state of the Mn cations. Since N substitution by Mn impurities in wurtzite GaN has never been observed experimentally or even considered theoretically before, it challenges the current paradigm of transition metal incorporation in wide-gap dilute magnetic semiconductors.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4