Electrode band structure effects in thin MgO magnetic tunnel junctions

• Type: Article in International Scientific Journal
• Date: 2012

Authors

teixeira, j. m. (Author) FCUP; ventura, j. (Author) FCUP; fernandez-garcia, m. p. (Author) FCUP; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) Other; wisniowski, p. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Applied Physics Letters

Vol. 100

Final page: 072406

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 8 Citations

Scopus - 8 Citations

Other information

Authenticus ID: P-002-D2A

DOI: 10.1063/1.3687200

Abstract (EN): In this study, we demonstrate that, beyond the standard magnon excitations, the electronic band structure of the electrodes plays a significant role on the low bias voltage window (0 < vertical bar V vertical bar < 0.4 V) of the tunnel magnetoresistance (TMR) in thin MgO-CoFeB junctions. The tunneling conductance in the parallel state presents a minimum at about +/- 0.35 and +/- 0.3V for the negative and positive bias, respectively. The presence of this minimum indicates a related decrease in the TMR(V). These observations are explained by the electronic band structures of bcc-Fe and Co. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687200]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3