Exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy with in-plane/out-of-plane sensing capabilities

• Type: Article in International Scientific Journal
• Date: 2012

Authors

teixeira, j. m. (Author) FCUP; ventura, j. (Author) FCUP; fernandez-garcia, m. p. (Author) Other; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) Other; wisniowski, p. (Author) Other; leitao, d. c. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Journal of Applied Physics

Vol. 111

Final page: 053930

ISSN: 0021-8979

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 14 Citations

Scopus - 15 Citations

Other information

Authenticus ID: P-002-CEP

DOI: 10.1063/1.3693585

Abstract (EN): We investigate the transport properties of exchange biased CoFeB-MgO tunnel junctions at the onset of perpendicular anisotropy of the CoFeB free layer. Angular dependent measurements of the tunnel conductance (varying the applied magnetic field from the in-plane to the out-of-plane direction) show linear and hysteresis-free switching under low applied magnetic fields, demonstrating a new concept for a reversible in-plane/out-of-plane magnetoresistive sensor. State-of-the-art sensitivities were achieved, and a value of 0.4% TMR/Oe is observed in the direction perpendicular to the tunnel junction plane. An analysis of the anisotropy energies at play is performed based on a Stoner-Wohlfarth like model. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3693585]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4