Third-order topological insulator induced by disorder

• Type: Article in International Scientific Journal
• Date: 2024

Authors

Lóio, H (Author) Other; Gonçalves, M (Author) Other; Ribeiro, P (Author) Other; Eduardo V Castro (Author) FCUP

Journal

The Journal is awaiting validation by the Administrative Services.

Title: PHYSICAL REVIEW B

Vol. 109

ISSN: 2469-9950

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 0 Citations

Other information

Authenticus ID: P-00Z-VJN

DOI: 10.1103/physrevb.109.014204

Abstract (EN): We have found the first instance of a third-order topological Anderson insulator (TOTAI). This disorderinduced topological phase is gapped and characterized by a quantized octupole moment and topologically protected corner states, as revealed by a detailed numerically exact analysis. We also find that the disorderinduced transition into the TOTAI phase can be analytically captured with remarkable accuracy using the self -consistent Born approximation. For a larger disorder strength, the TOTAI undergoes a transition to a trivial diffusive metal that in turn becomes an Anderson insulator at even larger disorder. Our findings show that disorder can induce third-order topological phases in three dimensions, therefore extending the class of known higher-order topological Anderson insulators.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7