Charge-to-Spin Interconversion in Low-Symmetry Topological Materials

• Type: Other Publications
• Date: 2021

Authors

Vila, M (Author) Other; Hsu, C (Author) Other; Aguilar, JG (Author) Other; Benitez, A (Author) Other; Waintal, X (Author) Other; Valenzuela, S (Author) Other; Pereira, V (Author) Other; Roche, S (Author) Other

Other information

Authenticus ID: P-00X-76A

DOI: 10.21203/rs.3.rs-124172/v1

Abstract (EN): <jats:title>Abstract</jats:title> <jats:p>The spin polarization induced by the spin Hall e¿ect (SHE) in thin ¿lms typically points out of the plane. This is rooted on the speci¿c symmetries of traditionally studied systems, not in a fundamental constraint. Here, we show that the reduced symmetry of strong spin-orbit coupling materials such as MoTe2 or WTe2 enables a new form of canted spin Hall e¿ect (SHE), characterized by large and robust in-plane spin polarizations, which gives rise to an unprecedented charge-to-spin interconversion e¿ect. Through quantum transport calculations on realistic device geometries, including disorder, we found long spin di¿usion lengths (¿s) and a gate tunable charge-to-spin interconversion e¿ciency with an upper value reaching ¿xy ¿ 80%. The SHE ¿gure of merit ¿s¿xy ~ 1¿50 nm, can signi¿cantly exceed values of conventional SHE materials, and stems from momentum-invariant (persistent) spin textures together with large spin Berry curvature along the Fermi contour. Speci¿c guidelines for unambiguous experimental con¿rmation are proposed, paving the way towards exploiting such phenomena in spintronic devices. These ¿ndings vividly emphasize how crystal symmetry and band topology can govern the intrinsic SHE, and how they may be exploited to broaden the range and e¿ciency of spintronic functionalities.</jats:p>

Language: English

Type (Professor's evaluation): Scientific