Abstract (EN):
A test technique for capacitive MEMS accelerometers and electrostatic microactuators, based on the measurement of pull-in
voltages and resonance frequency, is described. Using this combination of measurements, one can estimate process-induced
variations in the device layout dimensions as well as deviations from nominal value in material properties, which can be used
either for testing or device diagnostics purposes. Measurements performed on fabricated devices con¿rm that the 250 nm overetch
observed on SEM images can be correctly estimated using the proposed technique.
Language:
English
Type (Professor's evaluation):
Scientific
License type: