Ge nanocrystals in alumina matrix: a structural study

• Type: Article in International Conference Proceedings Book
• Date: 2010

Authors

Kashtiban, RJ (Author) Other; Pinto, SRC (Author) Other; Bangert, U (Author) Other; Rolo, AG (Author) Other; Chahboun, A (Author) Other; Gomes, MJM (Author) Other; Harvey, AJ (Author) Other

Conference proceedings International

Title: 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS

16th International Conference on Microscopy of Semiconducting Materials

Univ Oxford, Oxford, ENGLAND, MAR 17-20, 2009

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ISI Web of Knowledge - 5 Citations

Scopus - 6 Citations

Other information

Authenticus ID: P-007-SW8

DOI: 10.1088/1742-6596/209/1/012060

Abstract (EN): Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on silicon (111) substrates using radio-frequency (RF) magnetron sputtering By changing growth condition and annealing parameters samples with large and small Ge-NCs were produced The average size of NCs in the sample with larger NCs was estimated to be 7 2, 300 and 7 6 nm, and 5 0, 7 0 and 4 8 nm for the sample with smaller NCs, according to Xray diffraction (XRD), Raman and high resolution transmission electron microscopy (HRTEM) results, respectively Both, XRD and Raman peak positions of the larger NCs are shifted to higher angles and larger wave numbers in relation to the Ge bulk values, whereas the Raman peak was red-shifted for the smaller NCs indicating phonon confinement HRTEM shows twinned structures, which is an indication of relaxation Strain evaluation of the bigger NCs gave values <0 5 % which is within the estimated error of the evaluation technique

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4