Electrical Conduction of CdSe Nanocrystals Embedded in Silicon Oxide Films

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Levichev, S (Author) Other; Mamor, M (Author) Other; Rolo, AG (Author) Other; Pinto, SRC (Author) Other; Khodorov, A (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Journal of Nanoscience and Nanotechnology

Vol. 9 No. 6

Pages: 3418-3423

ISSN: 1533-4880

Publisher: American Scientific Publishers

Indexing

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Other information

Authenticus ID: P-003-JR2

DOI: 10.1166/jnn.2009.ns11

Abstract (EN): In this paper we report on the structural, optical and electrical properties of CdSe nanocrystals (NCs) embedded in silica matrix grown by the rf-magnetron sputtering technique with subsequent annealing under argon flux. Grazing incidence X-ray diffraction (GIXD), Photoluminescence (PL) and Raman spectroscopy, as well as current-voltage (I-V) measurements were used to characterize the CdSe NCs. The PL spectra of annealed samples demonstrate the presence of peaks in the range of 550-620 rim, indicating the quantum confinement effect in CdSe NCs. This quantum confinement effect in CdSe NCs was also confirmed by Raman spectroscopy. Finally, I-V behavior was explained by different concentrations and sizes of CdSe NCs.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6