Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO(2) matrix

• Type: Article in International Scientific Journal
• Date: 2008

Authors

Kafadaryan, EA (Author) Other; Levichev, S (Author) Other; Pinto, SRC (Author) Other; Aghamalyan, NR (Author) Other; Hovsepyan, RK (Author) Other; Badalyan, GR (Author) Other; Chahboun, A (Author) Other; Rolo, AG (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Semiconductor Science and Technology

Vol. 23

ISSN: 0268-1242

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 6 Citations

Scopus - 6 Citations

Other information

Authenticus ID: P-003-WVE

DOI: 10.1088/0268-1242/23/9/095025

Abstract (EN): CdSe nanocrystals (NCs) embedded in SiO(2) thin films were prepared using RF-magnetron co-sputtering. The average NC size was estimated to be 18 nm. The dark and photocurrent temporal dependences have been measured as a function of the magnitude of applied voltage (50-150 V). Annealing the samples seems to improve the photoconductivity (similar to 10(-12) Omega(-1)) that increases with the film thickness and slightly changes under the bias voltage. Furthermore, the photovoltage measurements showed that a concentration of CdSe in the range of 27 mol% leads to the generation of a photovoltaic signal up to 5 V at 400 mu W cm(-2). These results demonstrate the potential of silica films with embedded CdSe NCs for photovoltaic applications.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5