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Structure and dielectric properties of sol-gel 9/65/35 PLZT thin films

Title
Structure and dielectric properties of sol-gel 9/65/35 PLZT thin films
Type
Article in International Scientific Journal
Year
2005
Authors
Khodorov, A
(Author)
Other
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Pereira, M
(Author)
Other
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Gomes, MJM
(Author)
Other
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Journal
Vol. 25
Pages: 2285-2288
ISSN: 0955-2219
Publisher: Elsevier
Other information
Authenticus ID: P-000-64T
Abstract (EN): Ferroelectric lead lanthanum zirconate titanate thin films were prepared by a sol-gel method on Pu(1 1 1)/TiO2/SiO2/Si substrate. The texture selection was observed to be very sensitive to the preparation routine and samples with different preferred orientation were produced. The large- or fine-grained microstructure was observed depending on film thickness. The dielectric measurements of 360 nm thick film performed in the frequency window 10 Hz divided by 2 MHz revealed the typical relaxor behaviour. The strong dispersion of dielectric permittivity was observed and the temperature shift of maximum of imaginary part of dielectric permittivity with measured frequency was fitted well with the Vogel-Fulcher law.
Language: English
Type (Professor's evaluation): Scientific
No. of pages: 4
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