Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: Morphological, structural and charge trapping properties

• Type: Article in International Scientific Journal
• Date: 2013

Authors

Martin Sanchez, J (Author) Other; Capan, I (Author) Other; Chahboun, A (Author) Other; Pinto, SRC (Author) Other; Vieira, EMF (Author) Other; Rolo, AG (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Applied Surface Science

Vol. 280

Pages: 632-640

ISSN: 0169-4332

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 6 Citations

Other information

Authenticus ID: P-006-81G

DOI: 10.1016/j.apsusc.2013.04.170

Abstract (EN): In this work, a novel customized shadowed off-axis deposition set-up is used to perform an original study of Ge nanoparticles (NPs) formation in an inert Ar gas atmosphere by pulsed laser deposition at room temperature varying systematically the background Ar gas pressure (P-base(Ar)), target-substrate distance (d) and laser repetition rate (f). The influence of these parameters on the final NPs size distributions is investigated and a fairly uniform droplets-free and non-agglomerated NPs distribution with average height < h > = 2.8 perpendicular to 0.6 nm is obtained for optimized experimental conditions (P-base(Ar) = 1 mbar; d = 3 cm; f = 10 Hz) with a fine control in the NPs density (from 3.2 x 10(9) cm(-2) to 1.1 x 10(11) cm(-2)). The crystalline quality of as-deposited NPs investigations demonstrate a strong dependence with the Ar gas pressure and a crystalline to amorphous phase volume fraction chi(c) > 50% is found for P-base(Ar) = 2 mbar. The NPs functionality for charge trapping applications has been successfully demonstrated by capacitance-voltage (C-V) electrical measurements.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9