Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area

• Type: Article in International Scientific Journal
• Date: 2006

Authors

ventura, j. (Author) Other; Ferreira, R (Author) Other; sousa, j. b. (Author) FCUP; Freitas, PP (Author) Other

Journal

Title: IEEE Transactions on Magnetics

Vol. 42

Pages: 2658-2660

ISSN: 0018-9464

Publisher: IEEE

Indexing

ISI Web of Knowledge - 9 Citations

Scopus - 9 Citations

Other information

Authenticus ID: P-004-GTQ

DOI: 10.1109/tmag.2006.879734

Abstract (EN): Magnetic tunnel junctions (MTJs) with partially oxidized 9-angstrom AlO(x)-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized MTJs, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown).

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3