Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition

• Type: Article in International Scientific Journal
• Date: 2010

Authors

Yang, J (Author) Other; Macedo, RJ (Author) Other; Debs, MG (Author) Other; Ferreira, R (Author) Other; Cardoso, S (Author) Other; Freitas, PJP (Author) Other; teixeira, j. m. (Author) REIT; ventura, j. (Author) REIT

Journal

Title: IEEE Transactions on Magnetics

Vol. 46 No. 6

Pages: 2002-2004

ISSN: 0018-9464

Publisher: IEEE

Indexing

ISI Web of Knowledge - 2 Citations

Scopus - 2 Citations

Other information

Authenticus ID: P-003-66E

DOI: 10.1109/tmag.2010.2041753

Abstract (EN): This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm x 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the resistance-area (RA) product, and RA value as low as 0.8 Omega mu m(2) could be successfully obtained for 0.75 nm thick MgO barriers. The average switching current density of 5.45 x 10(6) A/cm(2) can be obtained for a MTJ nanopillar with the dimension of 225 nm x 730.3 nm with low RA of 1.47 Omega mu m(2).

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3