Ferromagnetic coupling field reduction in CoFeB tunnel junctions deposited by ion beam

• Type: Article in International Scientific Journal
• Date: 2004

Authors

Cardoso, S (Author) Other; Ferreira, R (Author) Other; Freitas, P (Author) Other; MacKenzie, M (Author) Other; Chapman, J (Author) Other; ventura, j. (Author) Other; sousa, j. b. (Author) FCUP; Kreissig, U (Author) Other; MacKenzie, M (Author) Other; Chapman, J (Author) Other; Ventura, J (Author) Other; Sousa, J (Author) Other; Kreissig, U (Author) Other

Journal

Title: IEEE Transactions on Magnetics

Vol. 40

Pages: 2272-2274

ISSN: 0018-9464

Publisher: IEEE

Indexing

ISI Web of Knowledge - 20 Citations

Scopus - 22 Citations

Other information

Authenticus ID: P-000-9QB

DOI: 10.1109/tmag.2004.832147

Abstract (EN): In this paper, junctions with reduced H-f coupling were fabricated by ion beam deposition and oxidation, using CoFeB electrodes. The CoFeB layer has a strong (111) texture that can be the origin of lower H-f and coercivity when compared with CoFe. Junctions processed down to 2 x 4 mum(2) with 40-Angstrom-thick CoFeB bottom electrodes have 42% of tunneling magnetoresistance (TMR), (R x A similar to 400 Omega.mum(2)), H-c of similar to10 Oe and Hf of similar to2 Oe. CoFe-based junctions (R x A - 500 Omega.mum(2)) have lower TMR (similar to35%) and larger H-f (similar to5-6 Oe) and H-c (similar to12-14 Oe). Local chemical composition analysis of the cross section indicated Fe-O segregation with very little Co grown on top of the barrier for CoFe-based junctions and not for CoFeB ones.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3