Modeling buffer layer IGBTs with an efficient parameter extraction method

• Type: Article in International Conference Proceedings Book
• Date: 2005

Authors

Rui Chibante (Author) Other; Armando Araújo (Author) FEUP; Adriano Carvalho (Author) FEUP

Conference proceedings International

Title: 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3

Pages: 2194-2200

36th Annual IEEE Power Electronic Specialists Conference (PESC 05)

Recife, BRAZIL, JUN 12-16, 2005

Indexing

ISI Web of Knowledge - 8 Citations

Scopus - 11 Citations

INSPEC

Scientific classification

FOS: Engineering and technology > Environmental engineering

CORDIS: Technological sciences > Engineering > Electrical engineering

Other information

Authenticus ID: P-000-70D

DOI: 10.1109/pesc.2005.1581937

Abstract (EN): A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7