Secondary scintillation yield in pure xenon

• Type: Article in International Scientific Journal
• Date: 2007

Authors

Monteiro, CMB (Author) Other; Fernandes, LMP (Author) Other; Lopes, JAM (Author) Other; Coelho, LCC (Author) Other; Veloso, JFCA (Author) Other; dos Santos, JMF (Author) Other; Giboni, K (Author) Other; Aprile, E (Author) Other

Journal

Title: Journal of Instrumentation

Vol. 2

ISSN: 1748-0221

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 67 Citations

Other information

Authenticus ID: P-004-AC2

DOI: 10.1088/1748-0221/2/05/p05001

Abstract (EN): The xenon secondary scintillation yield was studied as a function of the electric field in the scintillation region, in a gas proportional scintillation counter operated at room temperature. A large area avalanche photodiode was used for the readout of the VUV secondary scintillation produced in the gas, together with the 5.9 keV x-rays directly absorbed in the photodiode. The latter was used as a reference for the determination of the number of charge carriers produced by the scintillation pulse and, thus, the number of VUV photons impinging the photodiode. A value of 140 photons/kV was obtained for the scintillation amplification parameter. The attained results are in good agreement with those predicted, for room temperature, by Monte Carlo simulation and Boltzmann calculations, as well as with those obtained for saturated xenon vapour, at cryogenic temperatures, and are about a factor of two higher than former results measured at room temperature.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 11