Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons

• Type: Article in International Scientific Journal
• Date: 2010

Authors

Eduardo V Castro (Author) Other; Ochoa, H (Author) Other; Katsnelson, MI (Author) Other; Gorbachev, RV (Author) Other; Elias, DC (Author) Other; Novoselov, KS (Author) Other; Geim, AK (Author) Other; Guinea, F (Author) Other

Journal

Title: Physical Review Letters

Vol. 105 No. 7

ISSN: 0031-9007

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 302 Citations

Scopus - 315 Citations

Other information

Authenticus ID: P-008-TVV

DOI: 10.1103/physrevlett.105.266601

Abstract (EN): The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T greater than or similar to 10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/Vs at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4