Lattice location of implanted Co in heavily doped (n+)- and (p)+-type silicon

• Type: Article in International Scientific Journal
• Date: 2017

Authors

da Silva, DJ (Author) Other; Wahl, U (Author) Other; Correia, JG (Author) Other; Amorim, LM (Author) Other; da Silva, MR (Author) Other; da Costa Pereira, LMD (Author) Other; araujo, j. p. (Author) FCUP

Journal

Title: Applied Physics A: Materials Science and Processing

Vol. 123

ISSN: 0947-8396

Publisher: Springer Nature

Indexing

ISI Web of Knowledge - 0 Citations

Scopus - 0 Citations

Other information

Authenticus ID: P-00M-MY2

DOI: 10.1007/s00339-017-0870-0

Abstract (EN): We have studied the influence of electronic doping on the preferred lattice sites of implanted Co-61, and the related stabilities against thermal annealing, in silicon. Using the beta(-) emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (nearBC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. We show clearly that the fractions of Co on these lattice sites change with doping. While near-BC sites prevail in n(+)-type Si, near-T sites are preferred in p(+)-type Si. Less than similar to 35% of Co occupies ideal S sites in both types of heavily doped silicon, showing that the majority of implanted Co forms complex defect structures. Implantation-induced defects seem to getter more efficiently Co in lightly doped n-type than in heavily doped n(+)-or p(+)-type silicon. The formation of CoB pairs in p(+)-type silicon and its possible influence on the lattice sites is discussed.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 8