Direct observation of the lattice sites of implanted manganese in silicon

• Type: Article in International Scientific Journal
• Date: 2016

Authors

da Silva, DJ (Author) Other; Wahl, U (Author) Other; Correia, JG (Author) Other; Amorim, LM (Author) Other; Decoster, S (Author) Other; da Silva, MR (Author) Other; da Costa Pereira, LMD (Author) Other; araujo, j. p. (Author) FCUP

Journal

Title: Applied Physics A: Materials Science and Processing

Vol. 122

ISSN: 0947-8396

Publisher: Springer Nature

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 4 Citations

Other information

Authenticus ID: P-00K-A7B

DOI: 10.1007/s00339-016-9724-4

Abstract (EN): Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n(+) and p(+)) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered toward substitutional sites; and sites displaced from anti-bonding toward tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below similar to 30 %. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 8