Solid-state diffusion bonding of gamma-TiAl alloys using Ti/Al thin films as interlayers

• Type: Article in International Scientific Journal
• Date: 2006

Authors

Duarte, LI (Author) Other; Ramos, AS (Author) Other; Vieira, MF (Author) FEUP; Viana, F (Author) FEUP; Vieira, MT (Author) Other; Kocak, M (Author) Other

Journal

Title: Intermetallics

Vol. 14

Pages: 1151-1156

ISSN: 0966-9795

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 57 Citations

ISI Web of Science

Scopus - 76 Citations

Scientific classification

CORDIS: Technological sciences > Engineering > Materials engineering

FOS: Engineering and technology > Materials engineering

Other information

Authenticus ID: P-004-PZK

DOI: 10.1016/j.intermet.2005.12.011

Abstract (EN): Alternating nanometric layers of titanium and aluminium were used as filler material to promote joining between titanium aluminide samples. The improved diffusivity of these nanometric layers is thought to overcome the difficulties in solid-state joining of titanium aluminides without producing chemical discontinuities at the interface. In this study, a thin multilayer (alternating titanium and aluminium layers), 2 mu m thick, was deposited by dc-magnetron sputtering onto the two surfaces to be joined. The effects of processing conditions and the thickness of nanometric layers on microstructure and chemical composition variation across the interface have been analyzed. Sound regions can be obtained at temperatures as low as 600 degrees C but higher temperatures (800-1000 degrees C) are needed to obtain completely sound joints. During processing, the as-deposited film evolves to a nanocrystalline TiAl layer which may explain why the bond region is slightly harder than the base material.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6