Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Buljan, M (Autor) Outra; Pinto, SRC (Autor) Outra; Kashtiban, RJ (Autor) Outra; Rolo, AG (Autor) Outra; Chahboun, A (Autor) Outra; Bangert, U (Autor) Outra; Levichev, S (Autor) Outra; Holy, V (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of Applied Physics

Vol. 106

ISSN: 0021-8979

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 9 Citações

Scopus - 11 Citações

Outras Informações

ID Authenticus: P-003-F1K

DOI: 10.1063/1.3248373

Abstract (EN): In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si: Ge content. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3248373]

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6