Coulomb drag and high-resistivity behavior in double-layer graphene

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Peres, NMR (Author) Other; Lopes dos Santos, JMBL (Author) FCUP; Castro Neto, AH (Author) Other

Journal

Title: Europhysics Letters

Vol. 95

Final page: 18001

ISSN: 0295-5075

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 51 Citations

Scopus - 51 Citations

Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-002-Q69

DOI: 10.1209/0295-5075/95/18001

Abstract (EN): We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright (C) EPLA, 2011

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6