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Castro Neto, AH
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Abstract (EN):
We consider a graphene bilayer with a relative small angle rotation between the layers - a stacking defect often seen in the surface of graphite - and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap.
Language:
English
Type (Professor's evaluation):
Scientific
No. of pages:
4
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Electronic properties of a biased graphene bilayer (2010) Article in International Scientific Journal
Eduardo V Castro; Novoselov, KS; Morozov, SV; Peres, NMR; Lopes dos Santos, JMBL; Johan Nilsson; Guinea, F; Geim, AK; Castro Neto, AH