Er-O clustering and its influence on the lattice sites of Er in Si

• Type: Article in International Scientific Journal
• Date: 1999

Authors

Wahl, Ulrich (Author) Other; Correia, J. G. (Author) Other; Araújo, João Pedro (Author) Other; Vantomme, André (Author) Other; Langouche, Guido (Author) Other

Journal

Title: Physica B: Condensed Matter

Vol. 273-4

Pages: 342-345

ISSN: 0921-4526

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 4 Citations

Scopus - 5 Citations

Other information

Authenticus ID: P-001-2RP

DOI: 10.1016/s0921-4526(99)00472-x

Abstract (EN): We present emission channeling experiments on the lattice location of Er in CZ Si single crystals with a well-defined O concentration of 6.5-6.6 x 10(17) cm(-3) and 60 keV-implanted Tm + Er doses ranging from 4.3 x 10(12) to 3.6 x 10(13) cm(-2). The experimental results are compared with the predictions of a simulator which models the formation of Er(n)O(m) clusters on the basis of simple diffusion and capture kinetics. We find that our experimental data compare favorably with a scenario where the formation of Er(n) O(m) defects with one or more O atoms is responsible for removing the Er atoms from their tetrahedral interstitial (T) sites. This suggests that Er does no longer occupy the T site even in simple (ErO) pairs.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4