Emission channeling studies of Pr in GaN

• Type: Article in International Scientific Journal
• Date: 2000

Authors

Wahl, Ulrich (Author) Other; Vantomme, André (Author) Other; Langouche, Guido (Author) Other; Araújo, João Pedro (Author) Other; Peralta, Luís (Author) Other; Correia, J. G. (Author) Other

Journal

Title: Journal of Applied Physics

Vol. 88

Pages: 1319-1324

ISSN: 0021-8979

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 53 Citations

Scopus - 54 Citations

Other information

Authenticus ID: P-000-ZCE

DOI: 10.1063/1.373820

Abstract (EN): We report on the lattice location of Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of beta(-) particles emitted by the radioactive isotope Pr-143 was monitored by a position-sensitive electron detector following 60 keV room temperature implantation of the precursor isotope Cs-143 at a dose of 1x10(13) cm(-2) and annealing up to 900 degrees C. Our experiments provide direct evidence that Pr is thermally stable at substitutional Ga sites. (C) 2000 American Institute of Physics. [S0021-8979(00)03115-7].

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6