Lattice location of implanted Cu in highly doped Si

• Type: Article in International Scientific Journal
• Date: 2000

Authors

Wahl, Ulrich (Author) Other; Vantomme, André (Author) Other; Langouche, Guido (Author) Other; Araújo, João Pedro (Author) Other; Peralta, Luís (Author) Other; Correia, J. G. (Author) Other

Journal

Title: Applied Physics Letters

Vol. 77

Pages: 2142-2144

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 28 Citations

Scopus - 28 Citations

Other information

Authenticus ID: P-000-YR4

DOI: 10.1063/1.1314876

Abstract (EN): We report on the lattice location of ion-implanted Cu-67 in p(+)- and n(+)-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p(+)- and n(+)-Si. Annealing in the temperature range 200-600 degrees C resulted in changes of near-substitutional Cu to random sites in p(+)-Si, while in n(+)- Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7-2.0 eV for near-substitutional Cu in p(+)-Si and 2.9(2) eV for ideal substitutional Cu in n(+)-Si. (C) 2000 American Institute of Physics. [S0003-6951(00)02640-1].

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3