Emission channeling studies of implanted Er-167m in InP

• Type: Article in International Scientific Journal
• Date: 2001

Authors

Wahl, Ulrich (Author) Other; Vantomme, André (Author) Other; Langouche, Guido (Author) Other; Araújo, João Pedro (Author) Other

Journal

Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Vol. 175

Pages: 262-267

ISSN: 0168-583X

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 5 Citations

Scopus - 5 Citations

Other information

Authenticus ID: P-000-W11

DOI: 10.1016/s0168-583x(00)00531-0

Abstract (EN): We have used conversion electron emission channeling to determine the lattice location of Er-167 (t(1/2) = 2.28 s) in TnP after 60 keV room temperature implantation of Tm-167 (t(1/2) = 9.25 d) at a dose of 6.8 x 10(12) cm(-2). Following annealing at temperatures above the major recovery step of the implantation damage at 100-150 degreesC, we observe around 75% of Er on substitutional In sites. A smaller fraction of Er (6%) is found on substitutional P sites, the remainder on random sites. Annealing the unprotected InP crystal at temperatures above 250 degreesC in vacuum causes a decrease in the channeling effects.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6