Ion beam studies of single crystalline manganite thin films

• Type: Article in International Scientific Journal
• Date: 2004

Authors

Alves, Eduardo J. (Author) Other; Marques, Carlos P. (Author) Other; Amaral, V. S. (Author) Other; Araújo, João Pedro (Author) FCUP; Cristiani, Georg (Author) Other; Habermeier, Hanns Ulrich (Author) Other; Vieira, Joaquim Manuel (Author) Other

Journal

Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Vol. 219

Pages: 933-937

ISSN: 0168-583X

Publisher: Elsevier

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Other information

Authenticus ID: P-000-A8V

DOI: 10.1016/j.nimb.2004.01.191

Abstract (EN): Colossal magneto resistive manganites are oxide materials where the magnetic interactions and the electrical properties are mainly controlled by the Mn valence ratio (+3/+4). For thin films these properties present also a strong dependence on strain and microstructure. In this study we focus on doped La-Sr-MnO3 and undoped stoichiometric LaMnO3. The films were prepared by laser ablation using stoichiometric ceramic targets and were deposited at a substrate temperature of 770 degreesC on single crystalline SrTiO3. All the films were submitted to the same in situ oxygen/heat treatment and the thicknesses were in the range of 20-500 nm. Rutherford backscattering spectrometry/channelling analysis shows the epitaxial growth of manganite films with an excellent single crystalline quality. For fully strained films, due to lattice mismatch with the substrate, we obtained minimum yields of 5% measured along the [10 0] growth direction. Strain relaxation leads to an increase of the minimum yield with the increase of thickness. Detailed angular scans were performed in selected films to study the misalignment along the tilt [I 10] and [I 11] directions in order to obtain an indication on the residual strain. The results were compared with X-ray diffraction and the correlation with respect to the structural quality of the films is remarkable. Moreover the magnetic measurements suggest a close relation between the transition temperature (T-c) and the strain in the films.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5