Fe and Cu in Si: Lattice sites and trapping at implantation-related defects

• Type: Article in International Scientific Journal
• Date: 2006

Authors

wahl, u. (Author) Other; correia, j. g. (Author) Other; rita, e. (Author) Other; araujo, j. p. (Author) FCUP; soares, j. c. (Author) Other

Journal

Title: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Vol. 253

Pages: 167-171

ISSN: 0168-583X

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 21 Citations

Scopus - 15 Citations

Other information

Authenticus ID: P-004-FXF

DOI: 10.1016/j.nimb.2006.10.053

Abstract (EN): We have used the emission channeling technique in order to study the lattice sites of radioactive Fe-59 and Cu-67 following 60 keV ion implantation into Si single crystals at fluences around 10(12)-10(14) cm(-2). We find that in the room temperature as-implanted state in high-resistivity Si both Fe and Cu occupy mainly lattice sites displaced around 0.05 nm (0.5 angstrom) from substitutional positions. Both are released from these positions during annealing at temperatures between 300 degrees C and 600 degrees C. Fe is then found mainly on near-tetrahedral interstitial sites and further annealing causes it to be increasingly incorporated on ideal substitutional sites, on which it is stable to around 800 degrees C. We have strong indications that during annealing around 600 degrees C, along with the dominance of interstitial Fe, a redistribution towards the surface takes place, suggesting that the subsequent formation of ideal substitutional Fe may be related to the trapping of Fe at R-p/2, half of its implanted depth. Possible R-p/2 trapping might also have taken place in our Cu experiments but appears to be less efficient since Cu tended to escape to the bulk of the samples.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5