Electromigration-driven resistance switching in non-magnetic tunnel junctions

• Type: Article in International Scientific Journal
• Date: 2006

Authors

ventura, j. (Author) Other; pereira, a. m. (Author) FCUP; teixeira, j. m. (Author) FCUP; carpinteiro, f. (Author) Other; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) FCUP; liu, y. (Author) Other; zhang, z. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Journal of Alloys and Compounds

Vol. 423

Pages: 181-183

ISSN: 0925-8388

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Other information

Authenticus ID: P-004-GHH

DOI: 10.1016/j.jallcom.2005.12.105

Abstract (EN): Current induced switching (CIS) was recently observed in thin magnetic tunnel junctions and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. Here we study the CIS effect in tunnel junctions with a Ta layer deposited just below the insulating barrier. We observe enhanced resistance switching with increasing maximum applied current. Anomalous voltage-current characteristics with negative derivative were observed and this effect is attributed to heating in the tunnel junction. We also observe that, after repeatedly applying large current pulses, the electrical resistance decreases sharply through irreversible steps when ions are displaced into the barrier. (c) 2006 Elsevier B.V. All right reserved.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3