Amphoteric arsenic in GaN

• Type: Article in International Scientific Journal
• Date: 2007

Authors

wahl, u. (Author) Other; correia, j. g. (Author) Other; araujo, j. p. (Author) FCUP; rita, e. (Author) Other; soares, j. c. (Author) Other

Journal

Title: Applied Physics Letters

Vol. 90

Final page: 181934

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 6 Citations

Scopus - 6 Citations

Other information

Authenticus ID: P-004-AJ7

DOI: 10.1063/1.2736299

Abstract (EN): The authors have determined the lattice location of implanted arsenic in GaN by means of conversion electron emission channeling from radioactive As-73. They give direct evidence that As is an amphoteric impurity, thus settling the long-standing question as to whether it prefers cation or anion sites in GaN. The amphoteric character of As and the fact that As-Ga "antisites" are not minority defects provide additional aspects to be taken into account for an explanantion of the so-called miscibility gap in ternary GaAs1-xNx compounds, which cannot be grown with a single phase for values of x in the range of 0.1 < x < 0.99. (C) 2007 American Institute of Physics.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3