Power Bipolar Transistor Modeling Using SPICE. Proceedings of the Third Portuguese Conference on Automatic Control, Controlo98, Coimbra, September,1998.

• Type: Article in International Conference Proceedings Book
• Date: 1998

Authors

Armando Araújo (Author) FEUP; Jorge Martins de Carvalho (Author) FEUP; Adriano Carvalho (Author) FEUP

Conference proceedings International

Title: Proceedings 3rd Portuguese Conf. on Automatic Controlo

3rd Portuguese Conf. on Automatic Controlo¿98

Coimbra

Other information

Abstract (EN): A physics based model for the Power Bipolar Junction Transistor-PBJT- is implemented into the general circuit simulation package SPICE. This model, based on a variational formulation and finite element (FE) solution of the Drift-Diffusion and Poisson equations, in the low doped zone of the semiconductor, accurately describes turn-on, turn-off and conduction behaviors. The procedure used to implement the resulting model into SPICE is described. SPICE simulations are finally compared with known experiments for demonstration of its effectiveness.

Language: Portuguese

Type (Professor's evaluation): Scientific

No. of pages: 6