In situ TEM study of grain growth in nanocrystalline copper thin films

• Type: Article in International Scientific Journal
• Date: 2010

Authors

Simoes, S (Author) FEUP; Calinas, R (Author) Other; Vieira, MT (Author) Other; Vieira, MF (Author) FEUP; Ferreira, PJ (Author) Other

Journal

Title: Nanotechnology

Vol. 21 No. 30

Final page: 145701

ISSN: 0957-4484

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 106 Citations

ISI Web of Science

Scopus - 107 Citations

COMPENDEX

INSPEC

Scientific classification

FOS: Engineering and technology > Materials engineering

Other information

Authenticus ID: P-003-7HK

DOI: 10.1088/0957-4484/21/14/145701

Abstract (EN): Nanocrystalline metals demonstrate a range of fascinating properties, including high levels of mechanical strength. However, as these materials are exposed to high temperatures, it is critical to determine the grain size evolution, as this process can drastically change the mechanical properties. In this work, nanocrystalline sputtered Cu thin films with 43 +/- 2 nm grain size were produced by dc-magnetron sputtering. Specimens were subsequently annealed in situ in a transmission electron microscope at 100, 300 and 500 degrees C. Not only was grain growth more evident at 500 degrees C but also the fraction of twins found. An analysis of grain growth kinetics revealed a time exponent of 3 and activation energy of 35 kJ mol(-1). This value is explained by the high energy stored in the form of dislocation, grain boundaries and twin boundaries existing in nanocrystalline copper, as well as the high probability for atoms to move across grains in nanocrystalline materials.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 12