Extraction of semiconductor intrinsic laser parameters by intermodulation distortion analysis

• Type: Article in International Scientific Journal
• Date: 1997

Authors

H. M. Salgado (Author) FEUP; J. M. Ferreira (Author) Other; J. J. O'Reilly (Author) Other

Journal

Title: IEEE Photonics Technology Letters

Vol. 9 No. 10

Pages: 1331-1333

ISSN: 1041-1135

Publisher: IEEE

Indexing

ISI Web of Knowledge - 13 Citations

ISI Web of Science

Scopus - 13 Citations

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Communication engineering > Telecommunications engineering

Other information

Authenticus ID: P-001-AJY

DOI: 10.1109/68.623253

Abstract (EN): A new technique is described for the extraction of the intrinsic semiconductor laser parameters from intermodulation measurements of composite second-order (CSO) and composite third-order (CTB) distortion products. The effect of the parasitics elements are eliminated, by taking the distortion measurements at constant optical modulation depth, which enables one to obtain the laser parameters on packaged laser diodes. An optimization algorithm is then described that extracts the relevant laser parameters from the distortion data. This method was applied to a commercially available packaged laser diode and very good agreement was obtained between the measured and theoretical results.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3