Calibration of MEMS based test structures for predicting thermo-mechanical stress in integrated circuit interconnect structures

• Type: Article in National Scientific Journal
• Date: 2005

Authors

dos Santos, J.M.M. (Author) Other

Journal

Title: IEEE Trans. Device and Materials Reliability

Vol. 5 No. 4

Pages: 713-719

ISSN: IEEE TDMR

Publisher: IEEE Transactions on Device and Material Reliability

Indexing

ISI Web of Science

Scientific classification

FOS: Engineering and technology > Other engineering and technologies

CORDIS: Technological sciences > Technology > Micro-technology > Microsystems

Other information

Abstract (EN): This paper uses a rotating-beam-sensor structure to show that the extrinsic stress from the mismatch in expansion coefficient between the aluminum and the silicon substrate dominates over the compressive stress from the sputter growth. Sintering the layers at temperatures above 150°C reduces this compressive stress due to the action of creep. Calibration of the rotation of the device has been undertaken by direct comparison to high resolution X-ray-diffraction measurements and these show that the sensor has a resolution better than 2.8 MPa. Furthermore, we have used the sensor to investigate the variation of in-plane stress with the compliance of the intermetal dielectric, by directly comparing sensors fabricated on SiO2 and polyimide layers.

Language: Portuguese

Type (Professor's evaluation): Scientific