Self-assembling of Ge quantum dots in an alumina matrix

• Type: Article in International Scientific Journal
• Date: 2010

Authors

Buljan, M (Author) Other; Pinto, SRC (Author) Other; Rolo, AG (Author) Other; Martin Sanchez, J (Author) Other; Gomes, MJM (Author) Other; Grenzer, J (Author) Other; Muecklich, A (Author) Other; Bernstorff, S (Author) Other; Holy, V (Author) Other

Journal

Title: Physical Review B - Condensed Matter and Materials Physics

Vol. 82

ISSN: 1098-0121

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 21 Citations

Scopus - 27 Citations

Other information

Authenticus ID: P-003-04R

DOI: 10.1103/physrevb.82.235407

Abstract (EN): In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al(2)O(3) layer during magnetron sputtering deposition of a Ge+Al(2)O(3) mixture at an elevated substrate temperature. The self-assembly results in the formation of a well-ordered three-dimensional body-centered tetragonal quantum dot lattice within the whole deposited volume. The quantum dots formed are very small in size (less than 4.0 nm), have a narrow size distribution and a large packing density. The parameters of the quantum dot lattice can be tuned by changing the deposition parameters. The self-ordering of the quantum dots is explained by diffusion-mediated nucleation and surface-morphology effects and simulated by a kinetic Monte Carlo model.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7