Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

• Type: Article in International Scientific Journal
• Date: 2012

Authors

Pinto, SRC (Author) Other; Buljan, M (Author) Other; Marques, L (Author) Other; Martin Sanchez, J (Author) Other; Conde, O (Author) Other; Chahboun, A (Author) Other; Ramos, AR (Author) Other; Barradas, NP (Author) Other; Alves, E (Author) Other; Bernstorff, S (Author) Other; Grenzer, J (Author) Other; Muecklich, A (Author) Other; Ramos, MMD (Author) Other; Gomes, MJM (Author) Other

Journal

Title: Nanotechnology

Vol. 23

ISSN: 0957-4484

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 7 Citations

Scopus - 9 Citations

Other information

Authenticus ID: P-002-4FS

DOI: 10.1088/0957-4484/23/40/405605

Abstract (EN): In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 9