1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

• Type: Article in International Scientific Journal
• Date: 2004

Authors

Baidus, NV (Author) Other; Zvonkov, BN (Author) Other; Mokeeva, PB (Author) Other; Uskova, EA (Author) Other; Tikhov, SV (Author) Other; Vasilevskiy, MI (Author) Other; Gomes, MJM (Author) Other; Filonovich, SA (Author) Other

Journal

Title: Semiconductor Science and Technology

Vol. 19

Pages: S469-S471

ISSN: 0268-1242

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 13 Citations

Scopus - 13 Citations

Other information

Authenticus ID: P-000-B44

DOI: 10.1088/0268-1242/19/4/154

Abstract (EN): This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 mum range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3