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1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

Title
1.3-1.5 mu m electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
Type
Article in International Scientific Journal
Year
2004
Authors
Baidus, NV
(Author)
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Zvonkov, BN
(Author)
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Mokeeva, PB
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Uskova, EA
(Author)
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Tikhov, SV
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Vasilevskiy, MI
(Author)
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Gomes, MJM
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Filonovich, SA
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Journal
Vol. 19
Pages: S469-S471
ISSN: 0268-1242
Other information
Authenticus ID: P-000-B44
Abstract (EN): This communication reports the results of experimental studies of the electroluminescence (EL) of forward-biased Schottky barrier (SB) diodes fabricated on heterostructures where an InAs/GaAs quantum dot (QD) layer was placed in the space charge region. In order to reach a higher EL wavelength, the QD layer was overgrown by a thin combined GaAs/InGaAs cladding layer. The heterostructures with Au SBs were found to show pronounced EL originating from several confined exciton states in InAs QDs which is higher at 300 K than at low temperatures. It is shown that the EL wavelength can be tuned within the 1.3-1.57 mum range by changing the thickness and composition of the combined GaAs/InGaAs capping layer. We discuss possible mechanisms of the injection of holes needed for the radiative recombination in the QDs and possibilities of improving the EL quantum yield.
Language: English
Type (Professor's evaluation): Scientific
No. of pages: 3
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