Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots

• Type: Article in International Scientific Journal
• Date: 2005

Authors

Baidus, NV (Author) Other; Chahboun, A (Author) Other; Gomes, MJM (Author) Other; Vasilevskiy, MI (Author) Other; Demina, PB (Author) Other; Uskova, EA (Author) Other; Zvonkov, BN (Author) Other

Journal

Title: Applied Physics Letters

Vol. 87

ISSN: 0003-6951

Publisher: American Institute of Physics

Indexing

ISI Web of Knowledge - 9 Citations

Scopus - 9 Citations

Other information

Authenticus ID: P-000-1ZZ

DOI: 10.1063/1.2006978

Abstract (EN): We report results that witness the possibility of controlling the temperature (T) dependence of the photoluminescence (PL) from self-assembled InAs/GaAs quantum dots (QDs) overgrown by an InxGa1-xAs layer forming a quantum well. A growth treatment using tetrachloromethane eliminates the quenching of the PL intensity at room temperature. A reduction in the concentration of defects in the GaAs matrix and the corresponding increase of the radiative lifetime of the photocarriers are invoked to explain this effect. A simple model analyzing the behavior of the quasi-Fermi level in the QD heterostructure confirms our explanation. (c) 2005 American Institute of Physics.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3