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Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

Title
Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques
Type
Another Publication in an International Scientific Journal
Year
2008
Authors
Pinto, SRC
(Author)
Other
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Caldelas, P
(Author)
Other
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Rolo, AG
(Author)
Other
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Chahboun, A
(Author)
Other
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Gomes, MJM
(Author)
Other
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Journal
Vol. 14 No. S3
Pages: 61-64
ISSN: 1431-9276
Other information
Authenticus ID: P-003-WPS
Abstract (EN): Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix. © 2008 Microscopy Society of America.
Language: English
Type (Professor's evaluation): Scientific
No. of pages: 4
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